| PART |
Description |
Maker |
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| MMFT107T1 ON2213 |
MEDIUM POWER TMOS FET 250 mA / 200 VOLTS
MEDIUM POWER TMOS FET 250 mA, 200 VOLTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
| BS107A BS107ARL1G |
Small Signal MOSFET 250 mAmps, 200 Volts N.Channel TO.92
|
ON Semiconductor
|
| CM200TU-5F |
Trench Gate Design Six IGBTMOD?/a> 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD 200 Amperes/250 Volts
Trench Gate Design Six IGBTMOD200 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| MJL21193 MJL21194 ON2055 |
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| SFF1310Z SFF1310M |
40 AMPS 200 VOLTS 0.050 N-CHANNEL POWER MOSFET 40 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
Solid State Devices, Inc.
|
| MTD4N20E MTD4N20ET4 MTD4N20E-1 |
N?Channel DPAK Power MOSFET
OBSOLETE - Power MOSFET 4 Amps, 200 Volts
|
ON Semiconductor
|
| MTY55N20E |
OBSOLETE - Power MOSFET 55 Amps, 200 Volts
N?Channel Power MOSFET
|
ON Semiconductor
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTY55N20E MTY55N20E_D ON2720 |
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
|
| NTP30N20 |
POWER MOSFET 30 AMPS, 200 VOLTS
|
ON Semiconductor
|
| SFF250Z SFF250M |
30 AMP 200 Volts 0.085OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
